onsemi-WPH4003-1E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	1700 V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	10.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	48 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	850 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	3W (Ta), 55W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-3PF
Package / Case:	TO-3P-3 Full Pack

onsemi WPH4003-1E