VN2410LG
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onsemi VN2410LG

Manufacturer No:
VN2410LG
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
VN2410LG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 240V 200MA TO92-3
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):240 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:125 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Tc)
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-92 (TO-226)
Package / Case:TO-226-3, TO-92-3 Long Body
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Similar Products

Part Number VN2410LG VN2410L-G  
Manufacturer onsemi Microchip Technology
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 240 V 240 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 190mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 10Ohm @ 500mA, 10V 10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 125 pF @ 25 V 125 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 350mW (Tc) 1W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92 (TO-226) TO-92-3
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 (TO-226AA)

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