onsemi-STD25P03LT4G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Rds On (Max) @ Id, Vgs:	80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20 nC @ 5 V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	1260 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

onsemi STD25P03LT4G