onsemi-SS8050BBU-ON - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1.5 A
Voltage - Collector Emitter Breakdown (Max):	25 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 80mA, 800mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	85 @ 100mA, 1V
Power - Max:	1 W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3

onsemi SS8050BBU-ON