onsemi-SNSS30201MR6T1G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	30 V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 500mA, 5V
Power - Max:	535 mW
Frequency - Transition:	300MHz
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-TSOP

onsemi SNSS30201MR6T1G