onsemi-SMUN5111DW1T1G - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	2 PNP (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300nA, 10mA
Current - Collector Cutoff (Max):	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 10V
Power - Max:	385mW
Frequency - Transition:	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363

onsemi SMUN5111DW1T1G