onsemi-SGW10N60RUFDTM - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	16 A
Current - Collector Pulsed (Icm):	30 A
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 10A
Power - Max:	75 W
Switching Energy:	141µJ (on), 215µJ (off)
Input Type:	Standard
Gate Charge:	30 nC
Td (on/off) @ 25°C:	15ns/36ns
Test Condition:	300V, 10A, 20Ohm, 15V
Reverse Recovery Time (trr):	60 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263)

onsemi SGW10N60RUFDTM