onsemi-SGM2N60UFTF - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	2.4 A
Current - Collector Pulsed (Icm):	10 A
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 1.2A
Power - Max:	2.1 W
Switching Energy:	30µJ (on), 13µJ (off)
Input Type:	Standard
Gate Charge:	9 nC
Td (on/off) @ 25°C:	15ns/80ns
Test Condition:	300V, 1.2A, 200Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-4

onsemi SGM2N60UFTF