onsemi-SGH40N60UFDM1TU - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	40 A
Current - Collector Pulsed (Icm):	160 A
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 20A
Power - Max:	160 W
Switching Energy:	160µJ (on), 200µJ (off)
Input Type:	Standard
Gate Charge:	97 nC
Td (on/off) @ 25°C:	15ns/65ns
Test Condition:	300V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):	60 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P

onsemi SGH40N60UFDM1TU