SFP9640
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onsemi SFP9640

Manufacturer No:
SFP9640
Manufacturer:
onsemi
Package:
Tube
Datasheet:
SFP9640 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 200V 11A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1585 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):123W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number SFP9640 SFS9640   SFP9640L   SFP9644   SFP9540   SFP9610   SFP9620   SFP9630  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi
Product Status Obsolete Active Obsolete Active Obsolete Active Active Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 250 V 100 V 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 6.2A (Tc) 11A (Tc) 8.6A (Tc) 17A (Tc) 1.75A (Tc) 3.5A (Tc) 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 5.5A, 10V 500mOhm @ 3.1A, 10V 500mOhm @ 5.5A, 5V 800mOhm @ 4.3A, 10V 200mOhm @ 8.5A, 10V 3Ohm @ 900mA, 10V 1.5Ohm @ 1.8A, 10V 800mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 2V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V 59 nC @ 10 V 59 nC @ 5 V 58 nC @ 10 V 54 nC @ 10 V 11 nC @ 10 V 19 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±30V ±30V ±20V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1585 pF @ 25 V 1585 pF @ 25 V 1585 pF @ 25 V 1565 pF @ 25 V 1535 pF @ 25 V 285 pF @ 25 V 540 pF @ 25 V 965 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 123W (Tc) 40W (Tc) 98W (Tc) 123W (Tc) 132W (Tc) 20W (Tc) 38W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220F TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 Full Pack TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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