SFH9250L
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onsemi SFH9250L

Manufacturer No:
SFH9250L
Manufacturer:
onsemi
Package:
Tube
Datasheet:
SFH9250L Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 200V 19.5A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:230mOhm @ 9.8A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3250 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):204W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number SFH9250L SFF9250L  
Manufacturer onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 19.5A (Tc) 12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 230mOhm @ 9.8A, 5V 230mOhm @ 6.3A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 5 V 120 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3250 pF @ 25 V 3250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 204W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3PF
Package / Case TO-3P-3, SC-65-3 TO-3P-3 Full Pack

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