onsemi-SCH2830-TL-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	500mOhm @ 500mA, 4V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	1.5 nC @ 4 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	115 pF @ 10 V
FET Feature:	Schottky Diode (Isolated)
Power Dissipation (Max):	600mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-SCH
Package / Case:	6-SMD, Flat Leads

onsemi SCH2830-TL-E