SBRD8350T4G-VF01
  • Share:

onsemi SBRD8350T4G-VF01

Manufacturer No:
SBRD8350T4G-VF01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
SBRD8350T4G-VF01 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 50V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:600 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 µA @ 50 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.38
61

Please send RFQ , we will respond immediately.

Similar Products

Part Number SBRD8350T4G-VF01 SBRD835LT4G-VF01   SBRD8320T4G-VF01   SBRD8330T4G-VF01   SBRD8340T4G-VF01  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Schottky - Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 50 V - 20 V 30 V 40 V
Current - Average Rectified (Io) 3A - 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 600 mV @ 3 A - 600 mV @ 3 A 600 mV @ 3 A 600 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) - Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 200 µA @ 50 V - 200 µA @ 20 V 200 µA @ 30 V 200 µA @ 40 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount - Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 - TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK - DPAK DPAK DPAK
Operating Temperature - Junction -65°C ~ 175°C - -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

HS2MAL
HS2MAL
Taiwan Semiconductor Corporation
75NS, 2A, 1000V, HIGH EFFICIENT
IDH12G65C5XKSA2
IDH12G65C5XKSA2
Infineon Technologies
DIODE SCHOTKY 650V 12A TO220-2-1
SB260S-E3/54
SB260S-E3/54
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 2A DO204AL
ES2D R5G
ES2D R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
VS-SD403C16S15C
VS-SD403C16S15C
Vishay General Semiconductor - Diodes Division
DIODE GP 1.6KV 430A DO200AA
1N4002/54
1N4002/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
1N5626GPHE3/54
1N5626GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
VS-10ETF10STRLPBF
VS-10ETF10STRLPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 10A TO263AB
MUR460S R7G
MUR460S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
SFAF1002G C0G
SFAF1002G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A ITO220AC
RBR1VWM40ATR
RBR1VWM40ATR
Rohm Semiconductor
LOW VF, 40V, 1A, SCHOTTKY BARRIE
RB058LAM-30TFTR
RB058LAM-30TFTR
Rohm Semiconductor
AUTOMOTIVE SCHOTTKY BARRIER DIOD

Related Product By Brand

BSV52LT1G
BSV52LT1G
onsemi
TRANS NPN 12V 0.1A SOT23-3
KSC815OTA
KSC815OTA
onsemi
TRANS NPN 45V 0.2A TO92-3
MMJT9410T1G
MMJT9410T1G
onsemi
TRANS NPN 30V 3A SOT223
FDMS86381-F085
FDMS86381-F085
onsemi
MOSFET N-CH 80V 30A POWER56
MC100H643FNR2G
MC100H643FNR2G
onsemi
IC CLK BUFFER 1:8 80MHZ 28PLCC
NB4L339MNR4G
NB4L339MNR4G
onsemi
IC CLK BUFFER 2:4 700MHZ 32QFN
NLAST4051QSR
NLAST4051QSR
onsemi
IC MUX/DEMUX 1X8 16QSOP
74FR244SJX
74FR244SJX
onsemi
IC BUFFER NON-INVERT 5.5V 20SOP
MC74ACT240DWR2
MC74ACT240DWR2
onsemi
IC BUFFER INVERT 5.5V 20SOIC
MC100E150FNR2
MC100E150FNR2
onsemi
IC LATCH 6BIT D 5V ECL 28-PLCC
CAT1023ZD4I-30T3
CAT1023ZD4I-30T3
onsemi
IC SUPERVISOR MEMORY 8TDFN
CS5203A-2GDPR3
CS5203A-2GDPR3
onsemi
IC REG LINEAR 1.5V 3A D2PAK-3