SBAS16LT1G
  • Share:

onsemi SBAS16LT1G

Manufacturer No:
SBAS16LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
SBAS16LT1G Datasheet
ECAD Model:
-
Description:
DIODE GP 100V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 100 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.34
2,820

Please send RFQ , we will respond immediately.

Similar Products

Part Number SBAS16LT1G SBAS16LT3G   SBAS16WT1G   SBAS116LT1G   SBAS16HT1G  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 75 V 75 V 100 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 3 µs 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 100 V 1 µA @ 100 V 1 µA @ 75 V 5 nA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-76, SOD-323
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SOD-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

SBA130Q_R1_00001
SBA130Q_R1_00001
Panjit International Inc.
DFN1610-2L, SKY
CDBB3150-HF
CDBB3150-HF
Comchip Technology
DIODE SCHOTTKY 150V 3A DO214AA
SS320B-HF
SS320B-HF
Comchip Technology
DIODE SCHOTTKY 3A 200V SMB
VS-1N3212
VS-1N3212
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 15A DO203AB
JANTX1N6625US
JANTX1N6625US
Microchip Technology
DIODE GEN PURP 1.1KV 1A D5A
1N4448-T
1N4448-T
Diodes Incorporated
DIODE GEN PURP 75V 150MA DO35
S5GHE3/57T
S5GHE3/57T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 5A DO214AB
JANTX1N649-1
JANTX1N649-1
Microchip Technology
DIODE GEN PURP 600V 400MA DO35
V30120SGHM3/4W
V30120SGHM3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30A 120V TO-220AB
APD160VD-E1
APD160VD-E1
Diodes Incorporated
DIODE SCHOTTKY 60V 1A DO41
HER207G B0G
HER207G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
SRAF520H
SRAF520H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 5A ITO220AC

Related Product By Brand

P6KE20ARL
P6KE20ARL
onsemi
TVS DIODE 17.1VWM 27.7VC AXIAL
PN3643_J61Z
PN3643_J61Z
onsemi
TRANS NPN 30V 0.5A TO92-3
2V7002KT1G
2V7002KT1G
onsemi
MOSFET N-CH 60V 320MA SOT23
FQPF18N50V2
FQPF18N50V2
onsemi
MOSFET N-CH 500V 18A TO220F
MCH3377-TL-W
MCH3377-TL-W
onsemi
MOSFET P-CH 20V 3A 3MCPH
J112-D27Z
J112-D27Z
onsemi
JFET N-CH 35V 625MW TO92-3
SE5230DR2
SE5230DR2
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
CAT28C512LI12
CAT28C512LI12
onsemi
IC EEPROM 512KBIT PARALLEL 32DIP
CAT25160YI-GT3JN
CAT25160YI-GT3JN
onsemi
IC EEPROM 16KBIT SPI 8TSSOP
MAX708RESA-TG
MAX708RESA-TG
onsemi
IC SUPERVISOR 1 CHANNEL 8SOIC
NCP177BMX150TCG
NCP177BMX150TCG
onsemi
IC REG LINEAR 1.5V 500MA 4XDFN
MOC3043TM
MOC3043TM
onsemi
OPTOISOLATOR 4.17KV TRIAC 6DIP