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Part Number | RFP14N05 | RFP14N05L | RFP4N05 | RFD14N05 |
---|---|---|---|---|
Manufacturer | onsemi | Fairchild Semiconductor | Harris Corporation | Fairchild Semiconductor |
Product Status | Obsolete | Obsolete | Active | Obsolete |
FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 50 V | 50 V | 50 V | 50 V |
Current - Continuous Drain (Id) @ 25°C | 14A (Tc) | 14A (Tc) | 4A (Tc) | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - | 5V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 10V | 100mOhm @ 14A, 5V | 800mOhm @ 4A, 10V | 100mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | 2V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 20 V | 40 nC @ 10 V | - | 40 nC @ 20 V |
Vgs (Max) | - | ±10V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V | 670 pF @ 25 V | 200 pF @ 25 V | 570 pF @ 25 V |
FET Feature | - | - | - | - |
Power Dissipation (Max) | - | 48W (Tc) | 25W (Tc) | 48W (Tc) |
Operating Temperature | - | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220 | I-PAK |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-251-3 Short Leads, IPak, TO-251AA |