onsemi-PN100A_D26Z - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	PN100A_D26Z	PN100A_D27Z	PN100_D26Z	PN200A_D26Z
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	NPN	PNP
Current - Collector (Ic) (Max)	500 mA	500 mA	500 mA	500 mA
Voltage - Collector Emitter Breakdown (Max)	45 V	45 V	45 V	45 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 20mA, 200mA	400mV @ 20mA, 200mA	400mV @ 20mA, 200mA	400mV @ 20mA, 200mA
Current - Collector Cutoff (Max)	50nA	50nA	50nA	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 10mA, 1V	300 @ 10mA, 1V	100 @ 150mA, 5V	300 @ 10mA, 1V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	250MHz	250MHz	250MHz	250MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

onsemi PN100A_D26Z

Transistor Type:	NPN
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 20mA, 200mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 10mA, 1V
Power - Max:	625 mW
Frequency - Transition:	250MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3