onsemi-NXH80T120L3Q0S3G - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	75 A
Power - Max:	188 W
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 80A
Current - Collector Cutoff (Max):	300 µA
Input Capacitance (Cies) @ Vce:	18.15 nF @ 20 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	20-PIM/Q0PACK (55x32.5)

onsemi NXH80T120L3Q0S3G