onsemi-NXH50M65L4Q1SG - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Configuration:	Full Bridge
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	48 A
Power - Max:	86 W
Vce(on) (Max) @ Vge, Ic:	2.22V @ 15V, 50A
Current - Collector Cutoff (Max):	300 µA
Input Capacitance (Cies) @ Vce:	3.137 nF @ 20 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	27-PIM (71x37.4)

onsemi NXH50M65L4Q1SG