onsemi-NXH50M65L4C2ESG - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	50 A
Power - Max:	20 mW
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 75A
Current - Collector Cutoff (Max):	250 µA
Input Capacitance (Cies) @ Vce:	2.608 nF @ 20 V
Input:	Single Phase Bridge Rectifier
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	27-PowerDIP Module (1.858", 47.20mm)
Supplier Device Package:	27-DIP

onsemi NXH50M65L4C2ESG