onsemi-NXH50C120L2C2ES1G - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	50 A
Power - Max:	20 mW
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 50A
Current - Collector Cutoff (Max):	250 µA
Input Capacitance (Cies) @ Vce:	11.89 nF @ 20 V
Input:	Three Phase Bridge Rectifier
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	26-PowerDIP Module (1.199", 47.20mm)
Supplier Device Package:	26-DIP

onsemi NXH50C120L2C2ES1G