onsemi-NXH450B100H4Q2F2SG - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	2 Independent
Voltage - Collector Emitter Breakdown (Max):	1000 V
Current - Collector (Ic) (Max):	101 A
Power - Max:	234 W
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 150A
Current - Collector Cutoff (Max):	600 µA
Input Capacitance (Cies) @ Vce:	9.342 nF @ 20 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	56-PIM (93x47)

onsemi NXH450B100H4Q2F2SG