onsemi-NXH350N100H4Q2F2S1G - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Configuration:	Three Level Inverter
Voltage - Collector Emitter Breakdown (Max):	1000 V
Current - Collector (Ic) (Max):	303 A
Power - Max:	276 W
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 375A
Current - Collector Cutoff (Max):	1 mA
Input Capacitance (Cies) @ Vce:	24.146 nF @ 20 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	42-PIM/Q2PACK (93x47)

onsemi NXH350N100H4Q2F2S1G