onsemi-NXH100B120H3Q0SG - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Configuration:	2 Independent
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	61 A
Power - Max:	186 W
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 50A
Current - Collector Cutoff (Max):	200 µA
Input Capacitance (Cies) @ Vce:	9.075 nF @ 20 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	22-PIM/Q0BOOST (55x32.5)

onsemi NXH100B120H3Q0SG