onsemi-NVTYS029N08HTWG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	6.4A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	32.4mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:	4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:	6.3 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	369 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	3.1W (Ta), 33W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-LFPAK
Package / Case:	SOT-1205, 8-LFPAK56

onsemi NVTYS029N08HTWG