NVTFWS010N10MCLTAG
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onsemi NVTFWS010N10MCLTAG

Manufacturer No:
NVTFWS010N10MCLTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NVTFWS010N10MCLTAG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 11.7A 8WDFN
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11.7A (Ta), 57.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 85µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2150 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 77.8W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NVTFWS010N10MCLTAG NVTFS010N10MCLTAG  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 11.7A (Ta), 57.8A (Tc) 11.7A (Ta), 57.8 (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.6mOhm @ 15A, 10V 10.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 85µA 3V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2150 pF @ 50 V 2150 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 77.8W (Tc) 3.2W (Ta), 77.8W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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