NVTFS5824NLTWG
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onsemi NVTFS5824NLTWG

Manufacturer No:
NVTFS5824NLTWG
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
NVTFS5824NLTWG Datasheet
ECAD Model:
-
Description:
NVTFS5824 - POWER MOSFET 60V, 20
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 57W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NVTFS5824NLTWG NVTFS5826NLTWG   NVTFS5820NLTWG   NVTFS5824NLTAG  
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor
Product Status Active Obsolete Obsolete Active
FET Type N-Channel - N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V - 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc) - 11A (Ta) 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 20.5mOhm @ 10A, 10V - 11.5mOhm @ 8.7A, 10V 20.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA - 2.3V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V - 28 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±20V - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V - 1462 pF @ 25 V 850 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 3.2W (Ta), 57W (Tc) - 3.2W (Ta), 21W (Tc) 3.2W (Ta), 57W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount - Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) - 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN - 8-PowerWDFN 8-PowerWDFN

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