onsemi-NVMFWS020N06CT1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	19.6mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:	4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:	5.8 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	355 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	3.4W (Ta), 31W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN, 5 Leads

onsemi NVMFWS020N06CT1G