onsemi-NVMFD6H852NLT1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	25.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:	10 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	521 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	3.2W (Ta), 38W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-DFN (5x6) Dual Flag (SO8FL-Dual)
Package / Case:	8-PowerTDFN

onsemi NVMFD6H852NLT1G