onsemi-NVLUS4C12NTAG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	3.3V, 10V
Rds On (Max) @ Id, Vgs:	9mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	18 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1172 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	630mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-UDFN (2x2)
Package / Case:	6-UDFN Exposed Pad

onsemi NVLUS4C12NTAG