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| Part Number | NVH4L045N065SC1 | NVH4L015N065SC1 |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) | 142A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 25A, 18V | 18mOhm @ 75A, 18V |
| Vgs(th) (Max) @ Id | 4.3V @ 8mA | 4.3V @ 25mA |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 18 V | 283 nC @ 18 V |
| Vgs (Max) | +22V, -8V | +22V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 325 V | 4790 pF @ 325 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 187W (Tc) | 500W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-247-4L | TO-247-4L |
| Package / Case | TO-247-4 | TO-247-4 |
