onsemi-NVH4L018N075SC1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	750 V
Current - Continuous Drain (Id) @ 25°C:	140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	15V, 18V
Rds On (Max) @ Id, Vgs:	18mOhm @ 66A, 18V
Vgs(th) (Max) @ Id:	4.3V @ 22mA
Gate Charge (Qg) (Max) @ Vgs:	262 nC @ 18 V
Vgs (Max):	+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds:	5010 pF @ 375 V
FET Feature:	-
Power Dissipation (Max):	500W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-4L
Package / Case:	TO-247-4

onsemi NVH4L018N075SC1