NVGS3443T1G
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onsemi NVGS3443T1G

Manufacturer No:
NVGS3443T1G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
NVGS3443T1G Datasheet
ECAD Model:
-
Description:
SINGLE P-CHANNEL POWER MOSFET -2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:65mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:565 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number NVGS3443T1G NVGS3441T1G  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta) 1.65A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 65mOhm @ 4.4A, 4.5V 90mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 14 nC @ 4.5 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 565 pF @ 5 V 480 pF @ 5 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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