onsemi-NVF6P02T3G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	50mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	1200 pF @ 16 V
FET Feature:	-
Power Dissipation (Max):	8.3W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223 (TO-261)
Package / Case:	TO-261-4, TO-261AA

onsemi NVF6P02T3G