NVDSH20120C
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onsemi NVDSH20120C

Manufacturer No:
NVDSH20120C
Manufacturer:
onsemi
Package:
Tray
Datasheet:
NVDSH20120C Datasheet
ECAD Model:
-
Description:
SIC DIODE GEN2.0 1200V TO247-2L
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):26A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 1200 V
Capacitance @ Vr, F:1480pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number NVDSH20120C NVDSH50120C  
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 26A (DC) 53A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 20 A 1.75 V @ 50 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 1200 V 200 µA @ 1200 V
Capacitance @ Vr, F 1480pF @ 1V, 100kHz 3691pF @ 1V, 100kHz
Mounting Type Through Hole Through Hole
Package / Case TO-247-2 TO-247-2
Supplier Device Package TO-247-2 TO-247-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

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