NVD6415ANLT4G
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onsemi NVD6415ANLT4G

Manufacturer No:
NVD6415ANLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NVD6415ANLT4G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 23A DPAK-4
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:52mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1024 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NVD6415ANLT4G NVD6416ANLT4G   NVD6415ANT4G  
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 19A (Tc) 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 10A, 10V 74mOhm @ 19A, 10V 55mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V 40 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1024 pF @ 25 V 1000 pF @ 25 V 700 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 83W (Tc) 71W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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