NVD5C648NLT4G
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onsemi NVD5C648NLT4G

Manufacturer No:
NVD5C648NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NVD5C648NLT4G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 18A/89A DPAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.1mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 72W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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$1.43
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Similar Products

Part Number NVD5C648NLT4G NVD5C668NLT4G   NVD5C688NLT4G  
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 89A (Tc) 49A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 45A, 10V 8.9mOhm @ 25A, 10V 27.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 8.7 nC @ 4.5 V 3.4 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V 1300 pF @ 25 V 400 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 72W (Tc) 44W (Tc) 18W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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