NVD5807NT4G-VF01
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onsemi NVD5807NT4G-VF01

Manufacturer No:
NVD5807NT4G-VF01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NVD5807NT4G-VF01 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 23A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:31mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:603 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):33W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NVD5807NT4G-VF01 NVD5802NT4G-VF01  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 16.4A (Ta), 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 5A, 10V 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 603 pF @ 25 V 5300 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 33W (Tj) 2.5W (Ta), 93.75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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