onsemi-NVD5802NT4G-TB01 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	16.4A (Ta), 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	100 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5300 pF @ 12 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 93.75W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

onsemi NVD5802NT4G-TB01