onsemi-NVD4813NHT4G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	7.6A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 11.5V
Rds On (Max) @ Id, Vgs:	13mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	10 nC @ 4.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	940 pF @ 12 V
FET Feature:	-
Power Dissipation (Max):	1.27W (Ta), 35.3W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

onsemi NVD4813NHT4G