onsemi-NVC6S5A354PLZT1G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Rds On (Max) @ Id, Vgs:	100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	14 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	600 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	1.9W (Ta)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-CPH
Package / Case:	SOT-23-6 Thin, TSOT-23-6

onsemi NVC6S5A354PLZT1G