onsemi-NVBLS0D5N04CTXG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	65A (Ta), 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	0.57mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	4V @ 475µA
Gate Charge (Qg) (Max) @ Vgs:	185 nC @ 10 V
Vgs (Max):	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:	12600 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	4.3W (Ta), 198.4W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-HPSOF
Package / Case:	8-PowerSFN

onsemi NVBLS0D5N04CTXG