onsemi-NVBG160N120SC1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	224mOhm @ 12A, 20V
Vgs(th) (Max) @ Id:	4.3V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:	33.8 nC @ 20 V
Vgs (Max):	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:	678 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	136W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK-7
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

onsemi NVBG160N120SC1