onsemi-NVB60N06T4G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	60A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	81 nC @ 10 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	3220 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.4W (Ta), 150W (Tj)
Operating Temperature:	-
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

onsemi NVB60N06T4G