NVB5405NT4G
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onsemi NVB5405NT4G

Manufacturer No:
NVB5405NT4G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
NVB5405NT4G Datasheet
ECAD Model:
-
Description:
NVB5405 - SINGLE N-CHANNEL POWER
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:16.5A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4000 pF @ 32 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number NVB5405NT4G NVB5404NT4G  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 40 V -
Current - Continuous Drain (Id) @ 25°C 16.5A (Ta), 116A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V -
Rds On (Max) @ Id, Vgs 5.8mOhm @ 40A, 10V -
Vgs(th) (Max) @ Id 3.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 32 V -
FET Feature - -
Power Dissipation (Max) 3W (Ta), 150W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package D²PAK -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB -

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