NTY100N10
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Manufacturer No:
NTY100N10
Manufacturer:
onsemi
Package:
Tube
Datasheet:
NTY100N10 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 123A TO264
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:123A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:350 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):313W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number NTY100N10 NTY100N10G  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 123A (Tc) 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 50A, 10V 10mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 350 nC @ 10 V 350 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10110 pF @ 25 V 10110 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 313W (Tc) 313W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264 TO-264
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

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