onsemi-NTTYS009N08HLTWG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:	24 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1402 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	3.2W (Ta), 73W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-LFPAK
Package / Case:	SOT-1205, 8-LFPAK56

onsemi NTTYS009N08HLTWG