onsemi-NTTFS2D1N04HLTWG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	24A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2.1mOhm @ 23A, 10V
Vgs(th) (Max) @ Id:	2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:	43.6 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2745 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	2.2W (Ta), 83W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-PQFN (3.3x3.3)
Package / Case:	8-PowerWDFN

onsemi NTTFS2D1N04HLTWG