NTTFS015P03P8ZTWG
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onsemi NTTFS015P03P8ZTWG

Manufacturer No:
NTTFS015P03P8ZTWG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTTFS015P03P8ZTWG Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 13.4A/47.6A 8DFN
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13.4A (Ta), 47.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.3mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62.3 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2706 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.66W (Ta), 33.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NTTFS015P03P8ZTWG NTTFS015P03P8ZTAG  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 13.4A (Ta), 47.6A (Tc) 13.4A (Ta), 47.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.3mOhm @ 12A, 10V 9.3mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62.3 nC @ 10 V 62.3 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2706 pF @ 15 V 2706 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.66W (Ta), 33.8W (Tc) 2.66W (Ta), 33.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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