NTR3162PT3G
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onsemi NTR3162PT3G

Manufacturer No:
NTR3162PT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTR3162PT3G Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 2.2A SOT23-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:70mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.3 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:940 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number NTR3162PT3G NTR3162PT1G  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 70mOhm @ 2.2A, 4.5V 70mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.3 nC @ 4.5 V 10.3 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 940 pF @ 10 V 940 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 480mW (Ta) 480mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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