NTR1P02LT3G
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onsemi NTR1P02LT3G

Manufacturer No:
NTR1P02LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
NTR1P02LT3G Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 1.3A SOT23-3
Delivery:
Payment:
iso14001
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iso9001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 4 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number NTR1P02LT3G NTR1P02T3G   NTR1P02LT1G  
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) 1A (Ta) 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 220mOhm @ 750mA, 4.5V 180mOhm @ 1.5A, 10V 220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 2.3V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4 V 2.5 nC @ 5 V 5.5 nC @ 4 V
Vgs (Max) ±12V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 5 V 165 pF @ 5 V 225 pF @ 5 V
FET Feature - - -
Power Dissipation (Max) 400mW (Ta) 400mW (Ta) 400mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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